'izrizu j*>.ml-l.ondu,etoi ipioaucti, una. c/ t/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 jl bfq43 BFQ43S v.h.f. power transistors n-p-n silicon planar epitaxial transistors intended for use in class-a, b or c operated mobile transmitters with a nominal supply voltage of 13,5 v. the transistors are resistance stabilized and guaranteed to with- stand severe load mismatch conditions with a supply over-voltage to 16,5 v. the bfq43 and BFQ43S are especially suited as driver transistors for the blw31 in a two-stage wideband or semi-wideband v.h.f. amplifier delivering 28 w output power. the bfq43 and BFQ43S have a to-39 metal envelope with the emitter connected to the case which enables excellent heatsinking and emitter grounding. quick reference data r.f. performance up to t^ = 25 c mode of operation c.w. class-b c.w, class-b vce \j 13,6 12,5 mhz 175 175 pl w 4 4 gp db > 12 typ. 12 n % > 65 typ. 60 zj n 3,2+jo,03 - y~l ms 53-j29 - mechanical data fig.1 to-39/3; emitter connected to case. dimensions in mm 8.5 max ,-0,51 . 12,7 ?j 7z7813s min maximum lead diameter is guaranteed only for 12,7 mm. * max. 4,9 for BFQ43S. n.i semi-conductors reserves the right to change test conditions, parameter limits tind package dimensions without notice information furnished by ml scmi-oumluclon ii bclwvtnl to he hnth accurate nml reliahle ,it the lime ot going to press. however vi vmm, onjutlurs .i^tuiks mi re^ptiiisibility rnr my errurs i>r tiiniuiinis disvuvurej in its iim; \l seini-ci.iiijin.il rs cnc , ji. t, im-re in i.-rifl lh ii .l:ilikh.vl> bfq43 BFQ43S jl storage temperature operating junction temperature ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe " 0) peak value vcesm collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current (average) 'c(av) collector current (peak value); f> 1 mhz icm total power dissipation up to tmb = 25 c ptot 'stg ri 36 v 18 v 4 v 1,25 a 3,75 a 12 w -65 to+175 c max. 200 c max. max. max. max. max. max. c (a) 0,5 0,1 7z77626 \0 (v) 20 30 fig. 2 d.c. soar. 15 ptot (w) 10 7z77627 (1) (2) 50 100 (1) short-time r.f. operation during mismatch; f5-1 mhz. (2) continuous d.c. and r.f. operation: derate by 0,05 w/k. fig, 3 total power dissipation; vce < 16,5 v. thermal resistance (dissipation = 4 w; tmb - 82 c, i.e. tn = 70 c) from junction to mounting base rthj-mb = from mounting base to heatsink rtn m|j.n = 3 k/w
v.h.f. power transistors characteristics tj = 25 c collector-emitter breakdown voltage vbe " 0; ic = 5 ma collector-emitter breakdown voltage open base; ic = 50 ma emitter-base breakdown voltage open collector; ie = 2 ma collector cut-off current vbe = o;vce = 18 v second breakdown energy; l - 25 mh; f = 50 hz open base rbe = 10 2 d.c. current gain * ic = 0,5a;vce-5v collector-emitter saturation voltage * ic= 1,5 a; ib = 0,3 a transition frequency at f =? 100 mhz * -ie = 0,5 a; vcb = 13,5 v -ie = 1,5a;vcb-13,5v jl v(br)ces v(br)ceo v(br)ebo 'ces esbo esbr "fe vcesat f-p *t bfq43 BFQ43S > 36 v > 18 v > 4v < 2 ma > 0,5 mj > 0,5 mj typ. 40 10 to 80 typ. 0,9 v typ. 750 mhz typ. 625 mhz collector capacitance at f - 1 mh7 ie = le = 0; vcb = 13,5v feedback capacitance at f = 1 mhz 1c =? 20 ma; vce = 13,5v typ. 15 pf typ. 7,3 pf
|
